View 2n7002pw datasheet:

2N7002PW60 V, 310 mA N-channel Trench MOSFETRev. 02 29 July 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits AEC-Q101 qualified Trench MOSFET technology Logic-level compatible Very fast switching1.3 Applications High-speed line driver Relay driver Low-side loadswitch Switching circuits1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitVDS drain-source Tamb = 25 C - - 60 VvoltageVGS gate-source -20 - 20 Vvoltage[1]ID drain current VGS =10V; Tamb =25C - - 310 mAStatic characteristicsRDSon drain-source VGS =10V; ID =500mA; - 1 1.6 on-state Tj =25C; tp 300 s; pulsed; r

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