View 2sa1822 datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1822DESCRIPTIONHigh Collector-Emitter Breakdown VoltageExcellent switching time100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applications.High speed DC-DC converter applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -400 VCBOV Collector-Emitter Voltage -400 VCEOV Emitter-Base Voltage -7 VEBOI Collector Current-Continuous -1 ACI Base Current-Continuous -0.5 ABCollector Power Dissipation2@T =25aP WCCollector Power Dissipation25@T =25CT Junction Temperature 150 JT Storage Temperature -55~150 stg1isc website www.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductorisc Si

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