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View 2sa1890 datasheet:

2sa18902sa1890

SMD Type TransistorsPNP Transistors2SA1890 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Complementary to 2SC5026.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1A Colletor Current - Pulse ICP -1.5 Collector Power Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mAIB= 0 -80 V Emitter - base breakdown voltage

 

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 2sa1890.pdf Design, MOSFET, Power

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