View 2sa1896 datasheet:

SMD Type TransistorsPNP Transistors2SA1896SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-2.5A Collector Emitter Voltage VCEO=-20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -25 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -2.5A Collector Current - Pulse ICP -5 Collector Power Dissipation (Note.1) PC 1.3 W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150Note.1: Mounted on ceramic substrate (250mm2X0.8mmt) Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -25 Collector- emitter breakdown voltage VCEO Ic= -1 mARBE= -20 V

Keywords - ALL TRANSISTORS DATASHEET

 2sa1896.pdf Design, MOSFET, Power

 2sa1896.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sa1896.pdf Database, Innovation, IC, Electricity