View 2sb817c datasheet:

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB817CDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max.) @I = -5ACE(sat) CGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter Voltage -140 VCEOV Emitter-Base Voltage -6 VEBOI Collector Current-Continuous -12 ACI Collector Current-Pulse -20 ACPCollector Power DissipationP 120 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stgisc website www.iscsemi.com isc & iscsemi is registered trademarkINCHANGE Semiconductor

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