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View 2sc1170a datasheet:

2sc1170a2sc1170a

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1170A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1400 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3.5 A IB Base current 1.0 A PC Collector power dissipation TC=25 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNITRth j-C Thermal resistance junction case 2.5 /W Inchange Semiconductor Product Specification S

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc1170a.pdf Design, MOSFET, Power

 2sc1170a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1170a.pdf Database, Innovation, IC, Electricity

 

 
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