View 2sc1173 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1173DESCRIPTIONLow Collector Saturation VoltageComplement to Type 2SA473100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsCar radio,car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 30 VCBOV Collector-Emitter Voltage 30 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 3 ACTotal Power DissipationP 10 WC@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITThermal Resistance, Junction to Case 12.5 /WRth j-c1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkI

Keywords - ALL TRANSISTORS DATASHEET

 2sc1173.pdf Design, MOSFET, Power

 2sc1173.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1173.pdf Database, Innovation, IC, Electricity