View 2sc3257 datasheet:

isc Silicon NPN Power Transistor 2SC3257DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 200 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 10 ACI Collector Current-Peak 15 ACMI Base Current-Continuous 2 ABCollector Power Dissipation1.5@ T =25aP WCCollector Power Dissipation40@ T =25CT Junction Temperature 150 JStorage Temperature Range -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is registered trademar

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