View 2sc3311 datasheet:

Transistor2SC3311ASilicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SA1309A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 60 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 7 V1.27 1.27Peak collector current ICP 200 mA 2.54 0.15Collector current IC 100 mA1:EmitterCollector power dissipation PC 300 mW2:Collector EIAJ:SC72Junction temperature Tj 150 C3:Base New S Type PackageStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitICBO VCB = 10V, IE = 0 0.1 ACollector cutoff currentICEO VCE = 10V, IB = 0 1 ACollector to base voltage VCBO IC =

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