View 2sc3315 e datasheet:

Transistor2SC3315Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Optimum for RF amplification of FM/AM radios.High transition frequency fT.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCEO 20 V2.54 0.15Emitter to base voltage VEBO 3 VCollector current IC 15 mA 1:Emitter2:Collector EIAJ:SC72Collector power dissipation PC 300 mW3:Base New S Type PackageJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector to base voltage VCBO IC = 10 A, IE = 0 30 VEmitter to base voltage VEBO IE = 10 A, IC = 0 3 V

Keywords - ALL TRANSISTORS DATASHEET

 2sc3315 e.pdf Design, MOSFET, Power

 2sc3315 e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc3315 e.pdf Database, Innovation, IC, Electricity