View 2sc3709 datasheet:

isc Silicon NPN Power Transistor 2SC3709DESCRIPTIONLow Collector Saturation Voltage-: V = 0.4V(Max)@I = 6ACE(sat) CGood Linearity of hFEComplement to Type 2SA1451Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 50 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 12 ACI Base Current-Continuous 2 ABCollector Power DissipationP 30 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SC3709ELECTRICAL CHARACTERISTICST =25 unless otherwise speci

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