View 2sc3709a datasheet:

2SC3709A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3709A High-Current Switching Applications Unit: mm Low collector saturation voltage: V = 0.4 V (max) CE (sat) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SA1451A Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6 VCollector current IC 12 ABase current IB 2 ACollector power dissipation PC 30 W(Tc = 25C) JEDEC Junction temperature Tj 150 CJEITA Storage temperature range Tstg -55 to 150 C TOSHIBA 2-10R1AWeight: 1.7 g (typ.) Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current ICBO VCB = 60 V, IE = 0 10 AEmitter cut-off current IEBO VEB =

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