View 2sc4317 datasheet:

2SC4317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4317 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 10 VEmitter-base voltage VEBO 1.5 VBase current IB 20 mACollector current IC 40 mACollector power dissipation PC 150 mWJunction temperature Tj 125 CStorage temperature range Tstg -55~125 CJEDEC JEITA SC-59TOSHIBA 2-3F1AWeight: 0.012 g (typ.) Microwave Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitTransition frequency fT VCE = 8 V, IC = 20 mA 7 10 GHz S21e2 (1) VCE = 8 V, IC = 20 mA, f = 1 GHz 10 13 Insertion gain dB S21e2 (2) V

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