View 2sc4542 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 10 ACI Collector Current- Peak 20 ACMI Base Current 5 ABCollector Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc Websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semic

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