View 2sc4638 datasheet:

Power Transistors2SC4638Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBOLow collector to emitter saturation voltage VCE(sat) 3.1 0.1Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (TC=25C) 1.3 0.21.4 0.1Parameter Symbol Ratings Unit+0.20.5 0.10.8 0.1Collector to base voltage VCBO 800 VVCES 800 V2.54 0.25Collector to emitter voltageVCEO 500 V5.08 0.5Emitter to base voltage VEBO 8 V1 2 3Peak collector current ICP 10 A1:Base2:CollectorCollector current IC 5 A3:EmitterBase current IB 3 A TO220 Full Pack Package(a)Collector power TC=25 C 40PC Wdissipation Ta=25 C 2Junction temperature Tj 150 CS

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