View 2sc4715 e datasheet:

Transistor2SC4715Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mm4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 150 V1.27 1.27Collector to emitter voltage VCEO 150 V2.54 0.15Emitter to base voltage VEBO 5 VPeak collector current ICP 100 mA1:EmitterCollector current IC 50 mA2:Collector EIAJ:SC72Collector power dissipation PC 300 mW3:Base New S Type PackageJunction temperature Tj 150 CStorage temperature Tstg 55 ~ +150 CElectrical Characteristics (Ta=25C)Parameter Symbol Conditions min typ max UnitCollector cutoff current ICBO VCB = 100V, IE = 0 1 AColl

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