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View 2sc4849 datasheet:

2sc48492sc4849

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4849DESCRIPTIONLow Collector Saturation Voltage: V = 0.6V(Max)@ I = 5ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 250 VCBOV Collector-Emitter Voltage 120 VCEOV Emitter-Base Voltage 12 VEBOI Collector Current-Continuous 7 ACI Collector Current-Pulse 15 ACMCollector Power Dissipation2@ T =25aP WCCollector Power Dissipation30@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150

 

Keywords - ALL TRANSISTORS DATASHEET

 2sc4849.pdf Design, MOSFET, Power

 2sc4849.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4849.pdf Database, Innovation, IC, Electricity

 

 
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