View 2sc4892 datasheet:

Power Transistors2SC4892Silicon NPN triple diffusion planar typeFor power switchingUnit: mm5.0 0.1Features 10.0 0.2 1.0High-speed switching90High collector to base voltage VCBOSatisfactory linearity of foward current transfer ratio hFE 1.2 0.1 C1.0Allowing supply with the radial taping2.25 0.20.65 0.10.35 0.1 1.05 0.1Absolute Maximum Ratings (TC=25C)0.55 0.1Parameter Symbol Ratings Unit 0.55 0.1Collector to base voltage VCBO 900 VVCES 900 V C1.01 2 3Collector to emitter voltageVCEO 800 V2.5 0.2 2.5 0.2Emitter to base voltage VEBO 7 V1:BasePeak collector current ICP 2 A 2:Collector3:EmitterCollector current IC 1 AMT4 Type PackageBase current IB 0.3 ACollector power TC=25 C 15PC Wdissipation Ta=25 C 2Junction temperature Tj 150 CStorage temperature Tstg 55 to +150 CElectrical

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