View 2sc4915 datasheet:

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emitter voltage VCEO 30 VEmitter-base voltage VEBO 4 VCollector current IC 20 mABase current IB 4 mACollector power dissipation PC 100 mWJunction temperature Tj 125 CJEDEC Storage temperature range Tstg -55~125 CJEITA TOSHIBA 2-2H1AWeight: 2.4 mg (typ.) Electrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current ICBO VCB = 40 V, IE = 0 A 0.1 A Emitter cut-off current IEBO VEB = 4 V

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