View 2sc4916 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4916DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay & color TV.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 7 ACI Collector Current- Continuous 14 ACMI Base Current- Continuous 3.5 ABCollector Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc Website isc & iscsemi is registered trademar

Keywords - ALL TRANSISTORS DATASHEET

 2sc4916.pdf Design, MOSFET, Power

 2sc4916.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4916.pdf Database, Innovation, IC, Electricity