View 2sc6090 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6090DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1500V (Min)(BR)CEOHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Color TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Collector-Emitter Voltage 700 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 10 ACI Collector Current-Pulse 25 ACPCollector Power Dissipation2@ T =25aP WCCollector Power Dissipation35@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc Websitewww.iscsemi.cn isc & iscsemi is registered trademarkINCHANGE Semiconductorisc

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