View 2sd1101 datasheet:

2SD1101Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SB831OutlineMPAK311. Emitter2. Base23. Collector2SD1101Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak current iC(peak) 1ACollector power dissipation PC 150 mWJunction temperature Tj 150 CStorage temperature Tstg 55 to +150 CElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsCollector to base breakdown V(BR)CBO 25 V IC = 10 A, IE = 0voltageCollector to emitter breakdown V(BR)CEO 20 V IC = 1 mA, RBE = voltageEmitter to base breakdown V(BR)EBO 5 V IE = 10 A, IC = 0voltageCollector cutoff current ICBO

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