View 2sd1105 datasheet:

isc Silicon NPN Power Transistor 2SD1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Power and High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage 120 VCBOV Collector-Emitter Voltage 80 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 15 ACI Base Current-Continuous 30 ABCollector Power DissipationP 200 WC@T =25CT Junction Temperature 150 jT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor 2SD1105ELECTRICAL CHARACTERISTICST =25 unless otherwise

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