View 2sd1220 datasheet:

2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SD1220 Power Amplifier Applications Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 150 VCollector-emitter voltage VCEO 150 VEmitter-base voltage VEBO 6 VCollector current IC 1.5 ABase current IB 1.0 ATa = 25C 1.0 Collector power PC W dissipation Tc = 25C 10 Junction temperature Tj 150 CStorage temperature range Tstg -55 to 150 C JEDEC JEITA TOSHIBA 2-7B1AWeight: 0.36 g (typ.) JEDEC JEITA TOSHIBA 2-7J1AWeight: 0.36 g (typ.) 1 2002-07-23 2SD1220 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current ICBO VCB = 150 V, IE = 0 1.0 AEmitter cut-off current IEBO VEB = 6 V, IC = 0

Keywords - ALL TRANSISTORS DATASHEET

 2sd1220.pdf Design, MOSFET, Power

 2sd1220.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd1220.pdf Database, Innovation, IC, Electricity