View 2sd1235 datasheet:

isc Silicon NPN Power Transistors 2SD1235DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLarge current switching of relay drivers, high-speedinverters,converters.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 30 VCEOV Emitter-Base Voltage 6 VEBOI Collector Current-Continuous 8 ACI Collector Current-Pulse 15 ACPCollector Power Dissipation1.75@ T =25aP WCCollector Power Dissipation30@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power T

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