View 2sd1261 datasheet:

Power Transistors2SD1261, 2SD1261ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification8.5 0.2 3.4 0.36.0 0.5 1.0 0.1Complementary to 2SB938 and 2SB938AFeatures High foward current transfer ratio hFE High-speed switching1.5max. 1.1max. N type package enabling direct soldering of the radiating fin to0.8 0.1 0.5max.the printed circuit board, etc. of small electronic equipment.2.54 0.3Absolute Maximum Ratings (TC=25C)5.08 0.51:BaseParameter Symbol Ratings Unit1 2 32:CollectorCollector to 2SD1261 60 3:EmitterVCBO VN Type Packagebase voltage 2SD1261A 80Unit: mmCollector to 2SD1261 60 8.5 0.2 3.4 0.3VCEO V6.0 0.3 1.0 0.1emitter voltage 2SD1261A 80Emitter to base voltage VEBO 5 VPeak collector current ICP 8 ACollector current IC 4 AR0.5Collector power TC=25 C 400.8

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