View 2sd1271a datasheet:

Power Transistors www.jmnic.com 2SD1271A Silicon NPN Transistors B C E Features For Power Switching. With TO-220Fa package Complement to type 2SB946 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Collector current 7 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-220Fa Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN Typ. MAX UNITICBO Collector cut-off current VCB=100V; IE=0 10 uAIEBO Emitter cut-off current VEB=5V; IC=0 50 uAVCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage IC=10mA; IB=0 100 VVEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation

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