View 2sd1276 datasheet:

Power Transistors2SD1276, 2SD1276ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Complementary to 2SB950 and 2SB950AFeaturesHigh foward current transfer ratio hFE 3.1 0.1High-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Maximum Ratings (TC=25C)+0.2Parameter Symbol Ratings Unit 0.5 0.10.8 0.1Collector to 2SD1276 60VCBO Vbase voltage 2SD1276A 80 2.54 0.25Collector to 2SD1276 605.08 0.5VCEO V1 2 3emitter voltage 2SD1276A 801:Base2:CollectorEmitter to base voltage VEBO 5 V3:EmitterPeak collector current ICP 8 A TO220 Full Pack Package(a)Collector current IC 4 AInternal ConnectionCollector power TC=25 C 40CPC Wdissipation Ta=25 C 2BJunction temperatur

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