View 2sd1279 datasheet:

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1279DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOLow Collector-Emitter Saturation Voltage-: V = 5.0V(Max.)@ I = 8.0ACE(sat) CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1400 VCBOV Collector-Emitter Voltage 600 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current- Continuous 10 ACI Base Current-Continuous 5 ABCollector Power DissipationP 50 WC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -65~150 stg1isc websitewww.iscsemi.com isc & iscsemi is r

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