View 2sd1351 datasheet:

isc Silicon NPN Power Transistor 2SD1351DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 1.0V(Max)@ (I = 2A, I = 0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60 VCEOV Emitter-Base Voltage 7 VEBOI Collector Current-Continuous 3 ACI Base Current-Continuous 0.5 ABCollector Power Dissipation2@T =25aP WCCollector Power Dissipation30@T =25CT Junction Temperature 150 JStorage Temperature -55~150 Tstg1isc websitewww.iscsemi.com isc & iscsemi is regist

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