View 2sd1650 datasheet:

2SD1650 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PMLSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCollector-emitter voltage (open base)VCEO - 600 VCollector current (DC)IC - 3.5 ACollector current peak valueICM - 7.0 ATotal power dissipation Tmb 25Ptot - 50 WCollector-emitter saturation voltage IC = 2.0A; IB = 0.4AVCEsat - 1.5 VCollector saturation current f = 16KHz - AIcsatDiode forward voltage IF = 2.0A 2.0 VVFFall time IC=2A,IB1=-IB2=0.4A,VCC=140V 1.0 stfLIMITING VALUESSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0V -

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