All Transistors. Datasheet

 

View 2sd2413 datasheet:

2sd24132sd2413

2SD2413TRANSISOR (NPN)FEATURES High collector to base voltage VCBO SOT-89 High collector to emitter voltage VCEO Large collector power dissipation PC 1. BASE Low collector to emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Marking:1S 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Power Dissipation 500 mWTJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100A, IE=0 400 VCollector-emitter breakdown voltage V(BR)CEO IC=0.5mA, IB=0 400 VEmitter-base

 

Keywords - ALL TRANSISTORS DATASHEET

 2sd2413.pdf Design, MOSFET, Power

 2sd2413.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sd2413.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.