View 2sj117 datasheet:

2SJ117Silicon P-Channel MOS FETADE-208-1180 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators.OutlineTO-220ABD1231. Gate2. DrainG(Flange)3. SourceS2SJ117Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 400 VGate to source voltage VGSS 20 VDrain current ID 2 ADrain peak current ID(pulse) 4 ABody to drain diode reverse drain current IDR 2 AChannel dissipation Pch*1 40 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes: 1. Value at TC = 25CElectrical Characteristics (Ta = 25C)Item Symbol Min Typ Max Unit Test conditionsDrain to source

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