View 2sj133 datasheet:

DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ133, 2SJ133-ZP-CHANNEL POWER MOS FETFOR SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = 4 V) High current control available in smalldimension due to low RDS(on) ( 0.45 ) 2SJ133-Z is a lead process product and is dealfor mounting a hybrid IC.QUALITY GRADES StandardPlease refer to Quality Grades on NECSemiconductor Devices (Document No.C11531E) published by NEC Corporation toElectrode connectionknow the specification of quality grade on the Gate (G)devices and its recommended applications. Drain (D) Source (S) Fin (drain)ABSOLUTE MAXIMUM RATINGS (Ta = 25C)INTERNALParameter Symbol Conditions Ratings UnitEQUIVALENT CIRCUITDrain to source voltage VDSS VGS = 0 -60 V20 VGate to source voltage V

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