View 2sj163 datasheet:

Silicon Junction FETs (Small Signal) 2SJ1632SJ163Silicon P-Channel JunctionUnit : mmFor general use switching+0.22.8 0.3Complementary with 2SK1103 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low ON-resistance Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2Drain current ID 20 mAGate current IG 10 mA1 : Source JEDEC : TO-236Allowable power dissipation PD 150 mW2 : Drain EIAJ : SC-59Channel temperature Tch 150 C 3 : Gate Mini Type Package (3-pin)Storage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C)Parameter Symbol Condition Min Typ Max UnitDrain-Source cut-off current IDSS * VDS=10V, VGS= 0 0.2 6 mAGate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nAGate-Drain voltage VGDS IG

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