View 2sj164 datasheet:

Silicon Junction FETs (Small Signal) 2SJ1642SJ164Silicon P-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3 : DrainGate current IG 10 mA New S Type PackageAllowable power dissipation PD 300 mWChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 C Electrical Characteristics (Ta = 25C)Parameter Symbol Condition Min Typ Max UnitDrain-Source cut-off current IDSS * VDS= 10V, VGS= 0 0.2 6 mAGate-Source leakage current IGSS VGS= 30V, VDS= 0 10 nAGate-Drain voltage VGDS IG=10A, VDS= 0 65 VGate-Source cut-off voltage VGSC VDS= 10V, ID= 10A 1.5 3.5

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