View 2sj167 datasheet:

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1061 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VGate-source voltage VGSS 20 V DC ID -200 Drain current mA Pulse IDP -800 JEDEC Drain power dissipation (Ta = 25C) PD 300 mW JEITA Channel temperature Tch 150 CTOSHIBA 2-4E1EStorage temperature range Tstg -55~150 CWeight: 0.13 g (typ.) 1 2003-03-25 2SJ167 Electrical Characteristics (Ta == 25C) ==Characteristics Symbol Test Conditio

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