View 2sj168 datasheet:

2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = -50 mA D Low on resistance: R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-mode Complementary to 2SK1062 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitDrain-source voltage VDSS -60 VGate-source voltage VGSS 20 V DC ID -200 JEDEC Drain current mA Pulse IDP -800 JEITA SC-59Drain power dissipation (Ta = 25C) PD 200 mW TOSHIBA 2-3F1FChannel temperature Tch 150 CWeight: 0.012 g (typ.) Storage temperature range Tstg -55~150 CNote: This transistor is the electrostatic sensitive device. Please handle with

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