View 2sj175 datasheet:

2SJ175Silicon P-Channel MOS FETNovember 1996ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid driveOutlineTO-220FMD1231. Gate G2. Drain 3. SourceS2SJ175Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitDrain to source voltage VDSS 60 VGate to source voltage VGSS 20 VDrain current ID 10 ADrain peak current ID(pulse)*1 40 ABody to drain diode reverse drain current IDR 10 AChannel dissipation Pch*2 25 WChannel temperature Tch 150 CStorage temperature Tstg 55 to +150 CNotes 1. PW 10 s, duty cycle 1%2. Value at TC = 25C22SJ175Electrical Characteristics (Ta = 25C)Item Symbol Min

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