View 2sj179 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ1791.70 0.1 Features VDS (V) =-30V ID =-1.5 A (VGS =-10V) RDS(ON) 1 (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 20 Continuous Drain Current ID -1.5A Pulsed Drain Current (Note.1) IDM -3 Power Dissipation PD 2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -30 V Zero Gate Voltage Drain Current IDSS VDS=-30V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=20V 100 n A Gate Cut off Vo

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