View 2sj193 datasheet:

Ordering number:EN3766P-Channel Silicon MOSFET2SJ193Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ193]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 15 VDrain Current (DC) ID 1 ADrain Current (Pulse) IDP PW10s, duty cycle1% 4 ATc=25C 3.5 WAllowable Power Dissipation PDMounted on ceramic board (250mm2 0.8mm) 1.5 WCChannel Temperature Tch 150Storage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Vo

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