View 2sj201 datasheet:

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltage VGSS 20 VJEITA Drain current (Note 1) ID -12 ADrain power dissipation (Tc = 25C) PD 150 WTOSHIBA 2-21F1BChannel temperature Tch 150 CWeight: 9.75 g (typ.) Storage temperature range Tstg -55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating

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