View 2sj205 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ2051.70 0.1 Features VDS (V) =-16V ID =-0.5 A (VGS =-10V)0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-4V) RDS(ON) 5 (VGS =-2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -16V Gate-Source Voltage VGS 16 Continuous Drain Current ID -0.5A Pulsed Drain Current (Note.1) IDM -1 Power Dissipation Tc = 25 PD 2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -16 V Zero Gate Voltage Drain Current IDSS VDS=-16V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=16V 5 uA Gate t

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