View 2sj209-3 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ209SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V ID =-0.1 A1 2+0.02 RDS(ON) 60 (VGS =-10V) +0.10.15 -0.020.95-0.1+0.11.9-0.2 RDS(ON) 100 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 16 Continuous Drain Current ID -0.1A Pulsed Drain Current (Note.1) IDM -0.2 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -100 V Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1 u

Keywords - ALL TRANSISTORS DATASHEET

 2sj209-3.pdf Design, MOSFET, Power

 2sj209-3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj209-3.pdf Database, Innovation, IC, Electricity