View 2sj211-3 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ211SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-100V1 2+0.02 ID =-0.2 A +0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 20 (VGS =-10V) RDS(ON) 30 (VGS =-4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -100V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.2A Pulsed Drain Current (Note.1) IDM -0.4 Power Dissipation PD 0.2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 ms, duty cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -100 V Zero Gate Voltage Drain Current IDSS VDS=-100V, VGS=0V -1

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