View 2sj212 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ2121.70 0.1 Features VDS (V) =-60V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5A Pulsed Drain Current (Note.1) IDM -1 Power Dissipation PD 2 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10ms,Duty Cycle 50% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS ID=-250A, VGS=0V -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA Gate-Body leakage current IGSS VDS=0V, VGS=20V 10 uA Gate Cut off Voltage VGS(off)

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