View 2sj217 datasheet:

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous: NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)D1. GateG2. Drain (Flange)3. Source123SRev.2.00 Sep 07, 2005 page 1 of 6 2SJ217 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 45 ADDrain peak current I Note 1 180 AD (pulse)Body to drain diode reverse drain current I 45 ADRChannel dissipation Pch Note 2 150 WChannel temperature Tch 150 C

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