View 2sj228 datasheet:

Ordering number:EN3813P-Channel Silicon MOSFET2SJ228Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2087A Low-voltage drive.[2SJ228]2.5 Meets radial taping.1.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 15 VDrain Current (DC) ID 0.8 ADrain Current (Pulse) IDP PW 10 s, duty cycle 1% 3.2 AAllowable Power Dissipation PD 1 WChannel Temperature Tch 150 CStorage Temperature Tstg 55 to +150 CElectrical Characteristics at Ta = 25CRatingsParameter Symbol Conditions Unitmin typ maxDrain-to-Source Breakdown Voltage V(BR)DSS ID=1mA

Keywords - ALL TRANSISTORS DATASHEET

 2sj228.pdf Design, MOSFET, Power

 2sj228.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj228.pdf Database, Innovation, IC, Electricity