View 2sj244 datasheet:

SMD Type MOSFETP-Channel MOSFET2SJ2441.70 0.1 Features VDS (V) =-12VD ID =-2 A0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS =-4V)G RDS(ON) 0.9 (VGS =-2.5V)1.Gate2.Drain3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS 7 Continuous Drain Current ID -2A Pulsed Drain Current (Note.1) IDM -4 Power Dissipation PD 1 W Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150Note.1: PW 10 us, duty cycle 10% Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage VDSS -1m A, VGS=0V -12 ID=V Gate-Source Breakdown Voltage VGSS IG=10A, VDS=0V 7 Zero Gate Voltage Drain Current IDSS VDS=-8V, VGS=0V -1 uA Gate-Body leakage c

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