View 2sj278 datasheet:

2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous: ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-AR(Package name: UPAK )D11. Gate232. DrainG3. Source4. Drain4SNote: Marking is MY. *UPAK is a trademark of Renesas Technology Corp. Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ278 Absolute Maximum Ratings (Ta = 25C) Item Symbol Value UnitDrain to source voltage V 60 VDSSGate to source voltage V 20 VGSSDrain current I 1 ADDrain peak current I Note 1 4 AD (pulse)Body to drain diode reverse drain current I 1 ADRChannel dissi

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